Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers

Microelectronics Journal

Volumn 38, Issue 1, 2007, Pages 52-59

  Campbell, Kristy A ^a   Anderson, Christopher M ^a  

^a Boise State University   (United States)

Author keywords

Ge2Sb2Te5; Ge2Se3; GeTe; GST; Non volatile; PCRAM; Phase change memory; SnSe; SnTe

Indexed keywords

ELECTRIC RESISTANCE; GERMANIUM; PHASE CHANGING CIRCUITS; TIN; VOLTAGE MEASUREMENT;

CHALCOGENIDE LAYERS; CHALCOGENIDE MATERIALS; PHASE CHANGE MEMORY; SWITCHING PROPERTIES;

DATA STORAGE EQUIPMENT;

EID: 33845191271     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.09.012     Document Type: Article

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