Dynamic behavior model for high-k MOSFETs

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Volumn 3, Issue , 2006, Pages 835-838

  Dunga, Mohan V ^a   Xi, Xuemei ^a   Niknejad, Ali M ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Compact model; Fast charging transient effects; High k; MOSFETs

Indexed keywords

CHARGING (BATTERIES); DATA ACQUISITION; DIELECTRIC MATERIALS; MATHEMATICAL MODELS; NETWORKS (CIRCUITS); TRANSISTORS;

COMPACT MODELS; FAST CHARGING TRANSIENT EFFECTS; HIGH-K;

MOSFET DEVICES;

EID: 33845187355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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5. B. H. Lee, et. al, "Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE), " IEDM Tech. Dig., pp. 859-862, 2004.
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8. W. Shockley, and W. T. Read, "Statistics of the Recombination of Holes and Electrons," Physical Rev., vol. 87, pp. 835-842, 1952.