In situ and real-time monitoring of plasma process chamber component qualities and predictive controlling of wafer yields

IEEE Transactions on Semiconductor Manufacturing

Volumn 19, Issue 4, 2006, Pages 432-436

  Lee, Szetsen ^a   Tien, Yu Chung ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Automatic process control (APC); Correlation coefficients; Plasma; Reactive ion etch (RIE); Vpp; Yield

Indexed keywords

CORRELATION METHODS; ELECTRIC FAULT LOCATION; PLASMA INTERACTIONS; PREDICTIVE CONTROL SYSTEMS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE;

AUTOMATIC PROCESS CONTROL (APC); CORRELATION COEFFICIENTS; FAULT DETECTION; PRODUCT YIELDS; VPP;

SILICON WAFERS;

EID: 33751551901     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2006.883595     Document Type: Conference Paper

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