Hole-well antimonide laser diodes on GaSb operating near 2.93μm

Electronics Letters

Volumn 42, Issue 24, 2006, Pages 1400-1401

  Cerutti, L ^a   Boissier, G ^a   Grech, P ^a   Perona A ^a   Angellier, J ^a   Rouillard, Y ^a   Kaspi, R ^b   Genty, F ^a  

^a UNIV MONTPELLIER   (France)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THRESHOLD VOLTAGE;

ANTIMONIDE LASER DIODES; GASB SUBSTRATES; HOLE WELL; QUANTUM CONFINED;

SEMICONDUCTOR LASERS;

EID: 33751515411     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062753     Document Type: Article

References (9)

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