Advanced dopant and self-diffusion studies in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 105-112

  Bracht, Hartmut ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

Dopant diffusion; Germanium; Isotope; Point defect; Self diffusion; Semiconductor; Silicon

Indexed keywords

DEFECTS; DOPING (ADDITIVES); EPITAXIAL GROWTH; GERMANIUM; ISOTOPES; SEMICONDUCTOR MATERIALS; SILICON; SUPERSATURATION;

DOPANT DIFFUSION; POINT DEFECT; SELF-DIFFUSION; SELF-INTERSTITIALS;

DIFFUSION;

EID: 33751348111     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.015     Document Type: Article

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