An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 9-12

  Giubertoni, D ^a   Pepponi, G ^a   Bersani, M ^a   Gennaro, S ^a   D'Acapito, F ^b   Doherty, R ^c   Foad, M A ^c  

^a ITC IRST   (Italy)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; DOPING (ADDITIVES); EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; X RAY ANALYSIS;

ATOMIC LAYERS; EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS); SUB-MELT ANNEALING; SURFACE ACCUMULATION;

SILICON;

EID: 33751338559     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.005     Document Type: Article

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