Dimensional effects on ferroelectrics: Ultra-thin single crystals, nanotubes, nano-rods, and nano-ribbons

Ferroelectrics

Volumn 316, Issue , 2005, Pages 13-21

  Scott, J F ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Ferroelectric random access memory; Nonocrystals; Random access memory; Thin films

Indexed keywords

ACTIVATION ENERGY; BARIUM TITANATE; CRYSTAL ORIENTATION; FERROELECTRIC MATERIALS; RELAXATION PROCESSES; SINGLE CRYSTALS; THIN FILMS;

BARIUM STRONTIUM TITANATE (BST); INTRINSIC DEPOLARIZATION; RANDOM ACCESS MEMORY;

NANOSTRUCTURED MATERIALS;

EID: 33751294885     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190590963084     Document Type: Article

References (33)

1. D. R. Tilley and B. Žekš, Landau theory of phase transitions in thick films. Solid State Commun. 49, 823-828 (1984).
2. G. Catalan, L. J. Sinnamon, and J. M. Gregg, The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films. J. Phys.: Condens Matter. 15, 2253-2264 (2003);
3. A. M. Bratkovsky and A. P. Levanyuk, Smearing of phase transition due to surface effect in ferroelectric nanostructures. Phys. Rev. Lett. 94, 107601 (2005);
4. M. Dawber and J. F. Scott, A model for fatigue in ferroelectric perovskite thin films. Appl. Phys. Lett. 76, 1060-1062 (2000); A model for fatigue in ferroelectric perovskites. Addendum, ibid. 76, 3655 (2000);
5. Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics. Appl. Phys. Lett. ibid. 76, 3801-3803 (2000).
6. International FRAM roadmap: http://public.itrs.net.
7. N. Menou, V. Madigou, et al., In: Abstracts of NATO conf. "Dimensionality Effects and Nonlinearity in Ferroics", paper L35, p. 57
8. [Ferroelectrics. 2005 (in press)].
9. H. Funakubo, et al., In: 7th Int. Conf. Ferroic Domains, Tsukuba, Japan, August 2004;
10. T. Shibutami, N. Oshima, and H. Funakubo eds. Tosoh Research J (Tokyo). 61 (2004).
11. S. Ottow, V. Lehmann, and H. Fòll, Development of three-dimensional microstructure processing using macroporous n-type silicon. Appl Phys A 63, 153-159 (1996);
12. Y. Arimoto and H. Ishiwara, Current status of ferroelectric random-access memory. MRS Bull. 29, 823-828 (2004).
13. D. J. Jung, F. D. Morrison, M. Dawber, H. H. Kim, K. Kim, and J. F. Scott, Effect of microgeometry on switching and transport in lead zirconate titanate capcitors: implications for etching of nano-ferroelectrics. J. Appl. Phys. 95, 4968-4975 (2004);
14. 3. Phys. Rev. Lett. 84, 4717-4120 (2000).
15. I. M. Tiginyanu, S. Langa, L. Sirbu, E. Monaico, M. A. Stevens-Kalceff, and H. Föll, Cathodoluminescence microanalysis of porous GaP and InP structures. Eur. Phys. J. Appl. Phys. 27, 81-84 (2004);
16. A. Cojocaru, A. Simashkevich, D. Sherban, V. Ursaki, I. Tsiulyanu, I. Usatyi, and I. Tiginyanu, Use of porous GaAs electrodes in photoelectrochemical cells. In: 4th Int. Conf. On Porous Semiconductors, Cullera-Valencia, Spain, March 14-19, 2004:P2-42
17. [Phys. Stat. Sol. (a) (in press)].
18. J. F. Scott and C. A. Paz de Araujo, Ferroelectric memories. Science 246, 1400-1405 (1989).
19. Naumov II, L. Bellaiche, and H.-X. Fu, Unusual phase transitions in ferroelectric nanodisks and nanorods. Nature 432, 737-740 (2004).
20. E. D. Mishina, V. I. Stadnichuk, A. S. Sigov, Y. I. Golovko, V. M. Mukhorotov, S. Nakabayashi, H. Masuda, D. Hashizume, and A. Nakao, Ferroelectric nanostructures sputtered on alumina membranes. Physica E. 25, 35-41 (2004);
21. F. D. Morrison, Y. Luo, I. Szafraniak, V. Nagarajan, R. B. Wehrspohn, M. Steinhart, J. H. Wendroff, N. D. Zakharov, E. D. Mishina, K. A. Vorotilov, A. S. Sigov, S. Nakabayashi, M. Alexe, R. Ramesh, and J. F. Scott, Ferroelectric nanotubes. Rev. Adv. Mater. Sci. 4, 114-122 (2003).
22. A. A. Gorbatsevich and Yu. V. Kopaev, Toroidal order in crystals. Ferroelectrics 161, 321-334 (1994).
23. M. M. Saad, P. Baxter, R. M. Bowman, J. M. Gregg, F. D. Morrison, and J. F. Scott, Intrinsic dielectric response in ferroelectric nano-capacitors. J. Phys.: Condens Matter 16, L451-L456 (2004).
24. 3 thin films. Appl. Phys. Lett. 81, 340-342 (2002).
25. 3 thin films. Phys. Rev. Lett. 89, 067601 (2002).
26. 3 single crystals. J. Phys. Soc. Japan 13, 761 (1958).
27. J. F. Scott, Science and technology of electroceramic thin films. In: O. Aucilello and R. Waser, eds. Proceedings of the NATO Advanced Research Workshop. Dordrecht: Kluwer Academic; 249-259 (1995).
28. R. Gerson and T. C. Marshall, Dielectric breakdown of porous ceramics. J. Appl. Phys. 30, 1650-1653 (1959).
29. S. Matsubara, T. Sakuma, S. Yamamichi, H. Yamaguchi, and Y. Miyasaka, In: A. I. Kingon and E. R. Myers, eds. Ferroelectric Thin Films (MRS Symp. Proc. 200). Pittsburgh, PA: Materials Research Society. 243-253 (1990);
30. S. Matsubara, S. Miyasaki, T. Sakuma, Y. Miyasaka, In: A. I. Kingon, E. R. Myers, and B. Tuttle, eds. Ferroelectric Thin Films II (MRS Symp. Proc. 243). Pittsburgh, PA: Materials Research Society. 281 (1992).
31. A. Lookman, R. M. Bowman, J. M. Gregg, J. Kut, S. Rios, M. Dawber, A. Ruediger, and J. F. Scott, Thickness independence of true phase transition temperatures in barium strontium titanate films. J. Appl. Phys. 96, 555-562 (2004).
32. 3 thin films. Phys. Rev. D 69, 174101-174105 (2004).
33. M. Dawber, P. Chandra, P. B. Littlewood, and J. F. Scott, Depolarization corrections to the coercive field in thin-film ferroelectrics. J. Phys.: Condens Matter. 15, L393-L398 (2003).