Characterization of low-k dielectric trench surface cleaning after a fluorocarbon etch

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 250-256

  Tan, Y S ^a   Chooi, Simon Y M ^a,b   Sin, Chian Yuh ^b   Ee, Ping Yu ^b   Srinivasan, M P ^a   Pehkonen, S O ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Cleaning; Contamination; Low k dielectric; X ray photoelectron spectroscopy

Indexed keywords

DIELECTRIC SIDEWALLS; LOW-K-DIELECTRIC; SILICON OXIDE; TRENCH STRUCTURES;

CHEMICAL VAPOR DEPOSITION; COPPER OXIDES; DIELECTRIC FILMS; ETCHING; FLUOROCARBONS; HYDROCARBONS; IMPURITIES; METALLIZING; OXIDATION; SURFACE CLEANING; ULSI CIRCUITS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC MATERIALS;

EID: 4344615586     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.053     Document Type: Article

References (10)

1. Mountsier T., Grief M., Goonetilleke C., Lassig S. McKerrow A.J. Advanced Metallization Conference 2001, Proceedings of the Conference, Montreal, Canada, October 8-11. 2001;295-299 Materials Research Society, Warrendale, USA.
2. An example of chemical nature of stripper A and stripper B. W.A. Wojtczak, G. Guan, D.N. Fine, S.A. Fine, U.S. Patent No. 6224785, 1 May 2001.
3. Wagner C.D., Riggs W.M., Davis L.E., Moulder J.F. Muilenberg G.E. Handbook of X-ray Photoelectron Spectroscopy. 1979;Perkin Elmer, Eden Prairie, MN.
4. Tobin J.P., Hirshwald W., Cunningham J. Appl. Surf. Sci. 16:1983;44.
5. Fleisch T.H., Mains G.J. Appl. Surf. Sci. 10:1982;51.
6. Benndorf C., Caus H., Egert B., Seidel H., Theime F. J. Electron. Spectrosc. Relat. Phenom. 19:1980;77.
7. Beamson G., Briggs D. High Resolution XPS of Organic Polymers, The Scienta ESCA A300 Database. 1992;Wiley, Chichester.
8. Briggs D., Seah M.P. Practical Surface Analysis. 1983;86-87 Wiley, New York.
9. Ueno K., Donnelly V.M., Kikkawa T. J. Electrochem. Soc. 144:1997;2565.
10. Ueno K., Donnelly V.M., Tsuchiya Y. J. Vac. Sci. Technol., B. 16(6):1998;2986.