Characterization of sputtered W-Si-N thin films by a monoenergetic positron beam

Radiation Physics and Chemistry

Volumn 76, Issue 2, 2007, Pages 209-212

  Mariazzi, S ^a   Macchi, C ^a   Boscolo Marchi, E ^b   Karwasz, G P ^a   Brusa, R S ^a  

^a UNIVERSITY OF TRENTO   (Italy)

^b LABORATORI NAZIONALI DI LEGNARO   (Italy)

Author keywords

Coincidence doppler broadening; Doppler broadening; Monoenergetic positrons; Positron annihilation spectroscopies; Ternary alloys; W Si N

Indexed keywords

ANNEALING; BACKSCATTERING; DOPPLER EFFECT; INFRARED SPECTROSCOPY; POSITRON ANNIHILATION SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

COINCIDENCE DOPPLER BROADENING; MONOENERGETIC POSITRONS; TERNARY ALLOYS;

THIN FILMS;

NICKEL; SILICON; TUNGSTEN;

ARTICLE; CHEMICAL STRUCTURE; FILM; INFRARED SPECTROSCOPY; MEASUREMENT; POSITRON; POSITRON EMISSION TOMOGRAPHY; STRUCTURE ANALYSIS; TEMPERATURE; THERMAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33751194866     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2006.03.037     Document Type: Article

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