Characteristics of the interfacial capacitance in thin film Ba 0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodes

Integrated Ferroelectrics

Volumn 60, Issue , 2004, Pages 79-86

  Mcaneney, J ^a   Sinnamon, L J ^a   Lookman, A ^a   Bowman, R M ^a   Gregg, J M ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

BST; Defects; Interfacial capacitance; Oxygen vacancy; Thin film

Indexed keywords

ACTIVATION ENERGY; BARIUM COMPOUNDS; DEFECTS; ELECTRIC SPACE CHARGE; ELECTRODES; ELECTRON TRAPS; PULSED LASER DEPOSITION; THIN FILMS;

INTERFACIAL CAPACITANCE; OXYGEN VACANCY; THERMAL ACTIVATION;

CAPACITANCE;

EID: 33751181013     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490441683     Document Type: Article

References (11)

1. A. I. Kingon, J. P. Maria, and S. K. Streiffer, "Alternative dielectrics to silicon dioxide for memory and logic devices," Nature 406, 1032-1038 (2000).
2. O. Auciello, J. F. Scott, and R. Ramesh, "The physics of ferroelectric memories," Phys: Today 51, 22-27 (1998).
3. 3 thin films deposited by RF magnetron sputtering." Jpn. J. Appl. Phys. 35, 5757-5762 (1996).
4. 3 thin films," Appl. Phys. Lett. 73, 954-956 (1998).
5. 3/Au thin-film capacitors," Appl. Phys. Lett. 78, 1724-1726 (2001).
6. L. J. Sinnamon, J. McAneney, R. M. Bowman, and J. M. Gregg, "Dependence of the interfacial capacitance on measurement regime used for investigation of thin film ferroelectric capacitors," J. Appl. Phys. 93, 736-744 (2003).
7. K. H. Hellwege and A. M. Hellwege, eds.: Crystal and Solid State Physics. In: Landolt-Bömstein, Numerical Data and Functional Relationships in Science and Technology, New Series Group III, Vol. 16(a). Springer-Verlag (1981).
8. 3 Appl. Phys. Lett. 77, 435-437 (2000).
9. C. Ang, Z. Yu, and L. E. Cross, "Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction in Bi:SrTiO3́," Phys. Rev. B 62, 228-236 (2000).
10. M. Dawber and J. F. Scott, "A model for Fatigue in ferroelectric perovskite thin films," Appl. Phys. Lett. 76, 1060-1062 (2000).
11. J. F. Scott and M. Dawber, "Oxygen vacancy ordering as a fatigue mechanism in perovskite ferroelectrics," Appl. Phys. Lett. 76, 3801-3803 (2000).