Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells

Journal of Luminescence

Volumn 122-123, Issue 1-2, 2007, Pages 753-755

  Nakayama, M ^a   Iguchi, Y ^b   Nomura, K ^b   Hashimoto, J ^a   Yamada, T ^b   Takagishi, S ^b  

^a Osaka Prefecture University   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

InGaNAs GaAs quantum well; Localized state; Photoluminescence; Stretched exponential decay

Indexed keywords

NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

BAND-EDGE STATES; LOCALIZED STATE; PHOTOREFLECTANCE SPECTROSCOPY; STRETCHED EXPONENTIAL DECAY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33751061952     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.01.279     Document Type: Article

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