-
1
-
-
0037103571
-
Carrier recombination at single dislocation in GaN measured by cathodoluminescence in a transmission electron microscope
-
Albrecht, M., Strunk, H.P., Weyher, J.L., Grzegory, I., Porowski, S. & Wosinski, T. (2002) Carrier recombination at single dislocation in GaN measured by cathodoluminescence in a transmission electron microscope. J. Appl. Phys. 92, 2000-2005.
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 2000-2005
-
-
Albrecht, M.1
Strunk, H.P.2
Weyher, J.L.3
Grzegory, I.4
Porowski, S.5
Wosinski, T.6
-
2
-
-
0000001449
-
Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys
-
Bellaiche, L. & Zunger, A. (1998) Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys. Phys. Rev. B, 57, 4425-4431.
-
(1998)
Phys. Rev. B
, vol.57
, pp. 4425-4431
-
-
Bellaiche, L.1
Zunger, A.2
-
3
-
-
0032622267
-
Resonant hole localization and anomalous optical bowing in InGaN alloys
-
Bellaiche, L., Mattila, T., Wang, L.-W., Wei, S.-H. & Zunger, A. (1999) Resonant hole localization and anomalous optical bowing in InGaN alloys. Appl. Phys. Lett. 74, 1842-1844.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1842-1844
-
-
Bellaiche, L.1
Mattila, T.2
Wang, L.-W.3
Wei, S.-H.4
Zunger, A.5
-
5
-
-
0347382992
-
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
-
Chichibu, S., Azuhata, T., Sota, T. & Nakamura, S. (1996) Spontaneous emission of localized excitons in InGaN single and multiquantum well structures. Appl. Phys. Lett. 69, 4188-4190.
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 4188-4190
-
-
Chichibu, S.1
Azuhata, T.2
Sota, T.3
Nakamura, S.4
-
6
-
-
0004038380
-
Cathodoluminescence characterisation of semiconductors
-
(ed. by D.B. Holt & D.C. Joy), Academic Press, Boston, San Diego, New York
-
Holt, D.B. & Yacobi, B.G. (1989) Cathodoluminescence characterisation of semiconductors. SEM Microcharacterisation of Semiconductors. Techniques in Physics 12 (ed. by D.B. Holt & D.C. Joy), pp. 373-423. Academic Press, Boston, San Diego, New York.
-
(1989)
SEM Microcharacterisation of Semiconductors. Techniques in Physics 12
, pp. 373-423
-
-
Holt, D.B.1
Yacobi, B.G.2
-
8
-
-
0032094527
-
Localized luminescence centres of InGaN
-
Kanie, H., Tsukamoto, N., Koami, H., Kawano, T. & Totsuka, T. (1998) Localized luminescence centres of InGaN. J. Cryst. Growth, 189, 52-56.
-
(1998)
J. Cryst. Growth
, vol.189
, pp. 52-56
-
-
Kanie, H.1
Tsukamoto, N.2
Koami, H.3
Kawano, T.4
Totsuka, T.5
-
11
-
-
3342960393
-
Origin of luminescence from InGaN diodes
-
O'Donnell, K.P., Martin, R.W. & Middleton, P.G. (1999) Origin of luminescence from InGaN diodes. Phys. Rev. Lett. 82, 237-240.
-
(1999)
Phys. Rev. Lett.
, vol.82
, pp. 237-240
-
-
O'Donnell, K.P.1
Martin, R.W.2
Middleton, P.G.3
-
12
-
-
85167472609
-
Electrooptical properties of the microstructure in chalcopyrite thin films
-
(ed. by S. Siebentritt & U. Rau), Springer Heidelberg, Berlin
-
Ott, N., Strunk, H.P., Albrecht, M., Hanna, G. & Kniese, R. (2005) Electrooptical properties of the microstructure in chalcopyrite thin films. Wide Gap Chalcopyrites (ed. by S. Siebentritt & U. Rau), pp. 177-189. Springer Heidelberg, Berlin.
-
(2005)
Wide Gap Chalcopyrites
, pp. 177-189
-
-
Ott, N.1
Strunk, H.P.2
Albrecht, M.3
Hanna, G.4
Kniese, R.5
-
13
-
-
3843145956
-
A new spectroscopic technique for imaging spatial distribution of nonradiative defects in a scanning transmission electron microscope
-
Petroff, P.M. & Lang, D.V. (1977) A new spectroscopic technique for imaging spatial distribution of nonradiative defects in a scanning transmission electron microscope. Appl. Phys. Lett. 31, 60-62.
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 60-62
-
-
Petroff, P.M.1
Lang, D.V.2
-
14
-
-
0000388698
-
Nonradiative recombination at dislocations in III-V compound semiconductors
-
Petroff, P.M., Logan, R.A. & Savage, A. (1980) Nonradiative recombination at dislocations in III-V compound semiconductors. Phys. Rev. Lett. 44, 287-291.
-
(1980)
Phys. Rev. Lett.
, vol.44
, pp. 287-291
-
-
Petroff, P.M.1
Logan, R.A.2
Savage, A.3
-
15
-
-
0030231076
-
High pressure growth of GaN - New prospects for blue lasers
-
Porowski, S. (1996) High pressure growth of GaN - new prospects for blue lasers. J. Cryst. Growth, 166, 583-589.
-
(1996)
J. Cryst. Growth
, vol.166
, pp. 583-589
-
-
Porowski, S.1
-
19
-
-
26444532324
-
2 analysed in-situ by cathodoluminescence in a transmission electron microscope
-
2 analysed in-situ by cathodoluminescence in a transmission electron microscope. Phys. Stat. Sol. (A), 202, 2336-2343.
-
(2005)
Phys. Stat. Sol. (A)
, vol.202
, pp. 2336-2343
-
-
Scheel, H.1
Frank, G.2
Strunk, H.P.3
-
20
-
-
13844317863
-
-
University of Tennessee (2001) Monte Carlo Simulation. http://web.utk.edu/~srcutk/htm/simulati.htm.
-
(2001)
Monte Carlo Simulation
-
-
-
21
-
-
0032094259
-
Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures
-
Wetzel, C., Takeuchi, T., Amano, H. & Akasaki, I. (1998a) Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures. J. Cryst. Growth, 189/190, 621-624.
-
(1998)
J. Cryst. Growth
, vol.189-190
, pp. 621-624
-
-
Wetzel, C.1
Takeuchi, T.2
Amano, H.3
Akasaki, I.4
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