Microstructure of flow pattern defects in boron-doped Czochralski-grown silicon

Rare Metals

Volumn 25, Issue 4, 2006, Pages 389-392

  Liu, Caichi ^a   Hao, Qiuyan ^a   Zhang, Jianfeng ^a   Teng, Xiaoyun ^a   Sun, Shilong ^a   Zhou, Qigang ^b   Wang, Jing ^b   Xiao, Qinghua ^b  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

Atomic force microscopy; Czochralski grown silicon; Flow pattern defects; Grown in defects

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BORON; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL MICROSTRUCTURE; CRYSTALS; DOPING (ADDITIVES); FLOW PATTERNS; MORPHOLOGY; OPTICAL MICROSCOPY;

CZOCHRALSKI-GROWN SILICON; FLOW PATTERN DEFECTS; GROWN-IN DEFECTS; HIGH-TEMPERATURE ANNEALING;

SILICON;

EID: 33750468009     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1001-0521(06)60073-9     Document Type: Article

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