IGBT operation at cryogenic temperatures: Non-punch-through and punch-through comparison

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2004, Pages 2960-2966

  Caiafa, A ^a   Snezhko, A ^b   Hudgins, J L ^a   Santi, E ^a   Prozorov, R ^b  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

IGBT NPT PT Cryogenic

Indexed keywords

CONDUCTION DROPS; DEVICE UNDER TEST (DUT); NON PUNCH THROUGH (NPT); PUNCH THROUGH (PT);

CRYOGENICS; ELECTRIC CONDUCTIVITY; ELECTRIC LOSSES; LOGIC DEVICES; LOW TEMPERATURE EFFECTS; POWER ELECTRONICS; SWITCHING; THERMAL CONDUCTIVITY;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 8744284440     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355305     Document Type: Conference Paper

References (10)

1. V.A.K. Temple and F.W. Holroid "Feasibility study for low-temperature Thyristor operation", Power electronics Laboratory, Corporate Research and Development, Schenectady NY, n.86CRD220, Dec. 1986
2. R. Singh, B.J. Baliga, "Cryogenic Operation of Asymmetrie n-channel IGBTs" Power Semiconductor Devices and ICs,1992. ISPSD '92. Proceedings of the 4th International Symposium on, May 19-21, 1992
3. R. Singh, B.J. Baliga, "Cryogenic Operation of P-i-N Power Rectifier" Power Semiconductor Devices and ICs,1993. ISPSD '93. Proceedings of the 5th International Symposium on, May 18-20, 1993
4. O. Mueller, "Properties of high-power Cryo-MOSFETs", Industry Application Conference, 19%. Thirty-First IAS Annual Meeting, IAS '96, Conference Record of the 19% IEEE, Volume 3, Oct. 6-1019%. pp 1443-1448
5. C.V. Godbold, J.L. Hudgins, C. Brown, W.M. Portnoy, "Temperature variation effects in MCTs, IGBTs and BMFETs" Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE, 20-24 June 1993Page(s): 93-98
6. B. Lengler, "Semiconductor devices suitable for use in cryogenic environments" Cryogenics, Vol. 14, n. 8, Aug. 1974, pp 439-447
7. J.F. Karner, H.W. Lorenzen, W. Rehm, "Semiconductors at low temperature", EPE Firenze, 1991
8. F. Rosenbauer, H.W. Lorenzen, "Behavior of IGBT modules in the temperature range from 5 to 300K", Cryogenics engineering conference, Columbus, OH July 1995
9. A. Caiafa, X. Wang, J.L. Hudgins, E. Santi, P. Palmer, "Cryogenic study and modeling of IGBT's" Power Electronics Specialists Conference, 2003. PESC 03. 2003 IEEE 34th Annual, Volume: 4, 2003 15 - 19 June 2003 Page(s): 1897-1903
10. S. Kolluri, "Application of distributed superconducting magnetic energy storage system (D-SMES) in the entergy system to improve voltage stability", Power Engineering Society Winter Meeting, 2002. IEEE, Volume: 2, 27-31 Jan. 2002 Page(s): 838-841 vol.2