Extraction of effective dielectric constants and the effect of process damage of low-k dielectrics for advanced interconnects

Thin Solid Films

Volumn 515, Issue 3, 2006, Pages 1203-1205

  Cheng, Y L ^a,b   Wang, Y L ^a,b   Chen, H C ^b  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Capacitance; Low k dielectrics; O2 ashing

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; EXTRACTION; MATHEMATICAL MODELS; PERMITTIVITY; PLASMAS; POROUS MATERIALS;

LOW-K DIELECTRICS; OXYGEN ASHING; PARASITIC CAPACITANCE; PLASMA TREATMENT;

DIELECTRIC MATERIALS;

EID: 33750452714     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.08.036     Document Type: Article

References (9)

1. International Technology Roadmap for Semiconductors, 2004. Available from , ITRS, Santa Clara, CA.
2. Seidel T.E., and Ting C.H. Mater. Res. Soc. Symp. Proc. 381 (1995) 3
3. Mayadas A.F., Shatzkes M., and Janak J.F. Appl. Phys. Lett. 14 (1969) 345
4. J.C. Lu, W. Wang, Proc. Of the 5th IITC, p225-227, June, San Francisco, 2002.
5. Liu P.T., Chang T.C., Su H., Mor Y.S., Yang Y.L., Chung H., Hou J., and Sze S.M. J. Electrochem. Soc. 148 (2001) F30
6. Liu P.T., Chang T.C., Sze S.M., Pan F.M., Mei Y.J., Wu W.F., Tsai M.S., Dai B.T., Chang C.Y., Shih F.Y., and Huang H.D. Thin Solid Films 332 (1998) 345
7. Chang T.C., Liu P.T., Mor Y.S., Tsai T.M., Chen C.W., Mei Y.J., Pan F.M., Wu W.F., and Sze S.M. J. Vac. Sci. Technol., B 20 (2002) 1561
8. Kondoh E., Asano T., Nakashima A., and Komatu M. J. Vac. Sci. Technol., B 19 (2000) 1276
9. Chang T.C., Liu P.T., Mor Y.S., Perng T.H., Chen C.W., Mei Y.J., Yang Y.L., and Sze S.M. J. Vac. Sci. Technol., B 17 (1999) 2325