Infrared absorption peaks in nitrogen doped CZ silicon

Materials Science and Engineering: B

Volumn 134, Issue 2-3 SPEC. ISS., 2006, Pages 202-206

  Inoue, N ^a,b   Nakatsu, M ^a   Ono, H ^b,c   Inoue, Y ^d  

^a Osaka Prefecture University   (Japan)

^b JEITA Nitrogen Measure   (Japan)

^c JAPAN FINE CERAMICS CENTER   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Annealing; Infrared absorption; Nitrogen; Shallow thermal donor; Silicon crystal

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); DOPING (ADDITIVES); INFRARED RADIATION; NITROGEN; THERMAL EFFECTS;

INFRARED ABSORPTION PEAKS; LOCAL VIBRATION MODE; SHALLOW THERMAL DONOR (STD); SILICON CRYSTAL;

SILICON;

EID: 33750375578     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.07.036     Document Type: Article

References (13)

1. Wagner P., Oeder R., and Zulehner W. Appl. Phys. A 46 (1988) 73
2. Inoue N., Shingu K., and Masumoto K. In: Huff H., et al. (Ed). Semiconductor Silicon 2002 (2002), Electrochem. Soc., Pennington 875
3. Voronkov V.V., Porrini M., Collareta P., Pretto M.G., Scala R., Falster R., Voronkova G.I., Batunina A.V., Golovina V.N., Arapkina L.V., Guliawva A.S., and Milvidski M.G. J. Appl. Phys. 89 (2001) 4289
4. Suezawa M., Sumino K., Harada H., and Abe T. Jpn. J. Appl. Phys. 25 (1986) L859
5. Ono H., and Horikawa M. Jpn. J. Appl. Phys. 42 (2003) L261
6. Gali A., Miro J., Deak P., Ewels C., and Jones R. J. Phys: Condens. Matt. 8 (1996) 7711
7. Inoue N., Natsume A., Hashimoto A., and Tanahashi K. Silicon Technol. 59 (2004) 34 (Jpn. Soc. Appl. Phys., 2004)
8. Inoue N., Nakatsu M., and Ono H. Physica B 376/377 (2006) 101
9. Inoue N., Nakatsu M., Tanahashi K., Kaneta H., Ono H., Akhmetov V.D., Lysytskiy O., and Richter H. Solid State Phenom. 108/109 (2005) 609
10. Shirai H., and Kashima K. Mater. Sci. Eng. B 95 (2002) 33
11. Inoue N., Masumoto K., Shinomiya M., Kashima K., Eifuku K., Koizumi M., Takahashi T., Takenawa T., Karen A., Shingu K., and Yagi H. Silicon Mater. Sci. Technol. (Electrochem. Soc.) X (2006) 453
12. Sakuma H., and Kaneta H. Ext. Abs. Autumn Meet. Jpn. Soc. Appl. Phys. 1 (2000) 367
13. Qi M.W., Tan S.S., Zhu B., Cai P.X., Gu W.W., Xu X.M., Shi T.S., Que D.L., and Li L.B. J. Appl. Phys. 69 (1991) 3775