Annealing behavior of new nitrogen infrared absorption peaks in CZ silicon

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 609-614

  Inoue, N ^a,c   Nakatsu, M ^a   Tanahashi, K ^b   Yamada Kaneta, H ^b,c   Ono, H ^c,d   Akhmetov, V D ^e,f   Lysytskiy, O ^f   Richter, H ^e,f  

^a Osaka Prefecture University   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c JEITA Nitrogen Measure   (Japan)

^d JAPAN FINE CERAMICS CENTER   (Japan)

^e IHP   (Germany)

^f BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Annealing; CZ silicon; Infrared absorption; Nitrogen

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; NITROGEN; OXYGEN; SILICON;

CZ SILICON; DEFECT FORMATION TEMPERATURE; INFRARED ABSORPTION PEAKS; THERMAL DONORS;

INFRARED ABSORPTION;

EID: 85088172195     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/3-908451-13-2.609     Document Type: Conference Paper

References (6)

1. P. Wagner, R. Oeder and W. Zulehner, Applied Physics A, 46(1988)73.
2. M. Nakatsu, A. Hashimoto, A. Natsume, N. Inoue and H. Ono, High Purity Silicon VIII, pp. 102-108 (Electrochemical Society, 2004).
3. N. Inoue, A. Natsume, A. Hashimoto and K. Tanahashi, Silicon Technology, No. 59, p. 34 (Japan Soc. Appl. Phys., 2004).
4. V. D. Akhmetov, O. Lysytskiy and H. Richter, High Purity Silicon VIII, pp. 109-120 (Electrochemical Society Proceedings Vols.2004-05, 2004)
5. K. Tanahashi, H. Kaneta and N. Inoue, Japan. J. Appl. Phys., 43 (2004) L436.
6. V. V. Voronkov et al., J. Appl. Phys., 89 (2001) 4289.