Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 568, Issue 1, 2006, Pages 34-40

  Klingenberg, R ^a   Krasel, O ^a   Mass M ^a   Dobos, D ^a   Gossling C ^a   Wunstorf, R ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

Author keywords

Neutron and proton irradiation; Radiation effects; Solid state detectors; Tracking and position sensitive detectors

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; NEUTRON IRRADIATION; PRODUCT DESIGN; PROTON IRRADIATION;

CHARGE COLLECTION; PIXEL SILICON DETECTORS; SOLID-STATE DETECTORS; TRANSIENT CURRENT TECHNIQUE (TCT);

SILICON SENSORS;

EID: 33750357803     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.273     Document Type: Article

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