Ferroelectric properties of Mn-doped Bi3.6La 0.4Ti3O12 thin films prepared under different annealing conditions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 B, 2004, Pages 6590-6593

  Kim, Jong Pil ^a   Hwang, Jae Yeol ^a   Cho, Chae Ryong ^a   Ryu, Min Ki ^b   Jang, Min Su ^b   Jeong, Se Young ^b  

^a Korea Basic Science Institute (KBSI)   (South Korea)

^b Pusan National University   (South Korea)

Author keywords

Heating rate; Mn doped BLT; NvRAM; Remanent polarization; Sol gel

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRICITY; MANGANESE; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SOL-GELS; X RAY DIFFRACTION ANALYSIS;

HEATING RATE; MN-DOPED BI3.6LA0.4TI3O12 (BLT); NVRAM;

THIN FILMS;

EID: 10444240237     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6590     Document Type: Conference Paper

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