Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice

Journal of Luminescence

Volumn 121, Issue 2 SPEC. ISS., 2006, Pages 417-420

  Fonseca, A ^a,b   Sobolev, N A ^b   Leitao J P ^b   Alves, E ^a   Carmo, M C ^b   Zakharov, N D ^c   Werner, P ^c   Tonkikh, A A ^d   Cirlin, G E ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

Ge Si quantum dots; Photoluminescence; Radiation hardness

Indexed keywords

CRYSTAL DEFECTS; PHOTOLUMINESCENCE; RADIATION HARDENING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

CHANNELLING; IRRADIATION FLUENCE; STRUCTURAL CHARACTERIZATION; X RAY REFLECTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750330018     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.08.047     Document Type: Article

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