SCOPUS 정보 검색 플랫폼

Volumn 167, Issue 3-4, 1996, Pages 502-507

Influence of electron irradiation and annealing on the photoluminescence of Si/Ge superlattices and Si/Ge quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON BEAMS; IRRADIATION; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON IRRADIATION; RADIATION RESISTANCE;

SUPERLATTICES;

EID: 0030259527 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00266-7 Document Type: Article

Times cited : (9)

References (14)

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