Acheivement of nano-scale SiGe layer with discrete Ge mole fraction profile using batch-type HVCVD

Journal of Rare Earths

Volumn 22, Issue SUPPL. 2, 2004, Pages 178-182

  Lee, Gon Sub ^a   Shim, Tae Hun ^a   Park, Jea Gun ^a  

^a Hanyang University   (South Korea)

Author keywords

Boat out time; Gas flow; Ge mole fraction; HVCVD; Nano scale SiGe layer; Strained Si

Indexed keywords

AERODYNAMICS; BOATS; EPITAXIAL GROWTH; FLOW OF GASES; GASES; GERMANIUM; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; SILICON ON INSULATOR TECHNOLOGY;

GAS FLOW; GE MOLE FRACTION; HVCVD; NANO SCALE SIGE LAYER; STRAINED SI;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33750314340     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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