Radiation Hardening of Silicon for Detectors by Preliminary Irradiation

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 399-404

  Litovchenko, P G ^a   Bisello, D ^b   Candelori, A ^b   Litovchenko, A P ^a,b   Groza, A A ^a   Dolgolenko, A P ^a   Khivrich, V I ^a   Barabash, L I ^a   Lastovetsky, V F ^a   Polivtsev, L A ^a   Wahl, W ^c   Wyss, J ^b  

^a INSTITUTE FOR NUCLEAR RESEARCH   (Ukraine)

^b UNIVERSITY OF PADOVA   (Italy)

^c INSTITUTE OF EPIDEMIOLOGY   (Germany)

Author keywords

Charged Particles; Cluster of Defects; Interstitials; Neutrons; Radiation Defects; Silicon; Vacancy

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHARGED PARTICLES; CRYSTAL LATTICES; FERMI LEVEL; INFRARED RADIATION; INFRARED SPECTROSCOPY; NEUTRON IRRADIATION; RADIATION HARDENING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SPECTROPHOTOMETERS; SURFACE TREATMENT;

NEUTRON TRANSMUTATION DOPING (NTD); NUCLEAR RADIATION FIELDS; RADIATION DEFECTS; RADIATION TREATMENT;

SILICON;

EID: 1642515995     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (9)

1. P. G. Litovchenko, F. Lemeilleur, A. P. Dolgolenko, L. I. Barabash, N. N. Kolychev, A. P. Litovchenko, V. F. Lastovetsky,. T. I. Kibkalo, L. A. Polivtsev. Dose dependence of the concentration of carriers in high resistivity Si irradiated by 24 GeV protons and properties of the detectors on its base. 3rd ROSE Workshop on Radiation Hardening of Silicon Detectors - DESY Hamburg - 12-14 Febr, - 1998.
2. P. Litovchenko, F. Lemeilleur, A. Dolgolenko,A. Litovchenko, L. Barabash, V. Khivrich, V. Lastovezky, A. Ruzin. The radiation hardness of high resistivity of neutron transmutation doping silicon. 4th ROSE Workshop on Radiation Hardening of Silicon Detectors - CERN, - 2-4 December, - 1998.
3. P. Litovchenko, F. Lemeilleur, A. Dolgolenko, A. Litovchenko, L. Barabash, V. Khivrich, V. Lastovezky, A. Ruzin, M. Glaser. The possibility to raise the radiation hardness of silicon, ROSE Meeting on Radiation Hardening of Silicon Detectors, CERN, - 14-15 June, - 1999.
4. A. A. Groza, V. I. Kutz, P. G. Litovchenko and V. I. Khivrich, The factors influencing formation oxygen - defect complexes in silicon single crystals // Elektronnaya Technika v.6, 5(178), pp. 60-61 (1983).
5. A. A. Groza and V. I. Khvrich, Near edge adsorption in the silicon irradiated by neutrons and by 1.5 MeV electrons // Phys. Tech. Poluprovodnikov 13(5), pp. 870-874 (1979).
6. A. P. Dolgolenko. Variation of Carrier Removal Rate with Irradiation Dose in Fast-Pile Neutron Irradiated n-Si // Phys. Stat. Sol. (a) 179, 179 - 188 (2000).
7. T.Gessner, M.Pesemann, and B.Schmidt. Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigation // Phys. Stat. Sol.(a) 77,133-138 (1983).
8. P. F. Lugakov, V. V. Lukjanitsa, The defects' nature and peculiar properties of its creation during neutron transmutation doped silicon irradiation // Fiz. Tekhn. Polupr., 17, 9, p. 1601 (1983).
9. I. I. Kolkovsky, L. F. Lugakov, V. V. Shusha, Recombination properties of radiation defects in NTD Si // Fiz. Tekhn. Polupr., 20, 5, 964 (1986)