Highly sensitive InGaAs/InAlAs quantum wire photo-FET

Electronics Letters

Volumn 42, Issue 7, 2006, Pages 413-414

  Ogura, M ^a   Sugaya, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC BEAMS; ELECTRIC WIRE; HYDROGEN; MOLECULAR BEAM EPITAXY; PHOTOSENSITIVITY; QUANTUM OPTICS;

ATOMIC HYDROGEN; INGAAS/INALAS QUANTUM WIRE PHOTO-FET; QUANTUM WIRE; V-GROOVED (311) INP SUBSTRATE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33750216729     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060319     Document Type: Article

References (5)

1. Song, H., and Kim, H.: ' Analysis of AlGaAs/GaAs heterojunction photodetector with a two-dimensional channel modulated by gate voltage ', Extended Abstract of 2003 Int. Conf. on Solid State Devices and Materials, Tokyo, Japan 2003, p. 186-187
2. Wang, X.-L., Ogura, M., and Matsuhata, H.: ' Fabrication of highly uniform AlGaAs/GaAs quantum wire superlattices by flow rate modulation epitaxy on V-grooved substrates ', J. Cryst. Growth, 1997, 171, (3-4), p. 341-348
3. Takasuka, Y., Yonei, K., Yamauchi, H., and Ogura, M.: ' InGaAs/AlGaAs quantum wire DFB buried heterostructure laser diode by one-time selective MOCVD on ridge substrate ', Jpn. J. Appl. Phys., 2005, 44, (4B), p. 2546-2548
4. Sugaya, T., Jang, K.-Y., Hahn, C.-K., Ogura, M., Komori, K., Shinoda, A., and Yonei, K.: ' Enhanced peak-to-valley current ratio in InGaAs/InAlAs trench-type quantum-wire negative differential resistance field-effect transistors ', J. Appl. Phys., 2005, 97, p. 034507-1-5
5. Hahn, C.-K., Sugaya, T., Jang, K.-Y., Wang, X.-L., and Ogura, M.: ' Electron transport properties in a GaAs/AlGaAs quantum wire grown on V-grooved GaAs substrate by metalorganic vapor phase epitaxy ', Jpn. J. Appl. Phys., 2003, 42, p. 2399-2403