Lateral reduction of random percolative networks formed by nanocrystals: Possibilities for a new concept electronic device?

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Pennelli, Giovanni ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRONIC EQUIPMENT; GRAIN SIZE AND SHAPE; MONTE CARLO METHODS; PERCOLATION (SOLID STATE);

ELECTRONIC DEVICES; PERCOLATIVE NETWORKS; RANDOM SITE NETWORKS;

NANOSTRUCTURED MATERIALS;

EID: 33750161454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2361282     Document Type: Article

References (27)

1. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors, Springer Series in Solid-State Science Vol. 45, Parts I and II (Springer, Berlin, 1984).
2. C. A. Neugebauer and M. B. Webb, J. Appl. Phys. 33, 74 (1962).
3. P. Bruschi, A. Nannini, and F. Massara, Thin Solid Films 196, 201 (1991).
4. M. Mostefa and G. Olivier, Solid State Commun. 59, 49 (1986).
5. C. H. Lin and G. Y. Wu, Physica B 279, 341 (2000).
6. D. Stauffer and A. Aharony, Introduction to Percolation Theory (CRC, Boca Raton, FL, 1994).
7. Geoffrey Grimmet, Percolation (Springer, Cambridge, 1999).
8. P. Sheng and B. Abeles, Phys. Rev. Lett. 28, 34 (1972).
9. Scott Kirkpatrick, Rev. Mod. Phys. 45, 574 (1973).
10. W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Random Numbers in Numerical Recipes in C (Cambridge University Press, Cambridge, 2002).
11. S. D. Baranovskii, O. Rubel, and P. Thomas, Thin Solid Films 487, 2 (2005).
12. E. H. Nicollian and R. Tsu, J. Appl. Phys. 74, 4020 (1993).
13. G. Pennelli, Thin Solid Films 348, 157 (1999).
14. A. Kanjilal, J. L. Hansen, P. Gaiduk, A. N. Larsen, N. Cherkashin, A. Glaverie, P. Normand, E. Kapelanakis, D. Skarlatos, and D. Tsoukalas, Appl. Phys. Lett. 82, 1212 (2003).
15. M. Kanoun, M. Lemiti, G. Bremond, A. Souifi, F. Bassani, and I. Berbezier, Superlattices Microstruct. 36, 143 (2004).
16. G. Ammendola, M. Vulpio, M. Bileci, N. Nastasi, C. Gerardi, G. Renna, I. Crupi, G. Nicotra, and S. Lombardo, J. Vac. Sci. Technol. B 20, 2075 (2002).
17. Y. Qiu-yi, R. Tsu, and E. H. Nicollian, Phys. Rev. B 44, 1806 (1991).
18. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
19. S. Lombardo, B. De Salvo, C. Gerardi, and T. Baron, Microelectron. Eng. 72, 388 (2004).
20. S. Choi, H. Yang, M. Chang, S. Baek, H. Hwang, S. Jeon, J. Kim, and C. Kim, Appl. Phys. Lett. 86, 251901 (2005).
21. A. Miller and E. Abrahams, Phys. Rev. 120, 745 (1960).
22. V. Ambegaokar, B. I. Halperin, and J. S. Langer, Phys. Rev. B 4, 2612 (1971).
23. M. Pollak and M. Ortuno, in Electron-Electron Interactions in Disordered Systems, Modern Problems in Condensed Matter Sciences, edited by, A. L. Efros, and, M. Pollak, (Elsevier Science, New York, 1985), Vol. 10, Chap., p. 287.
24. V. K. S. Shante, Phys. Rev. B 16, 2597 (1977).
25. E. Simanek, Solid State Commun. 40, 1021 (1981).
26. P. Sheng and J. Klafter, Phys. Rev. B 27, 2583 (1983).
27. R. Fogelholm, J. Phys. C 13, L751 (1980).