Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Hees, S S ^a,b   Kardynal, B E ^a   See, P ^a   Shields, A J ^a   Farrer, I ^b   Ritchie, D A ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GENERATION; PHOTON DETECTORS; RESONANT TUNNELING DIODES;

DEPOSITION; DETECTORS; ELECTRON TUNNELING; PHOTONS; RESONANT TUNNELING; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750020020     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2362997     Document Type: Article

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