A new NIST database for the simulation of electron spectra for surface analysis (SESSA): Application to angle-resolved X-ray photoelectron spectroscopy of HfO2, ZrO2, HfSiO4, and ZrSiO4 films on silicon

AIP Conference Proceedings

Volumn 788, Issue , 2005, Pages 107-111

  Powell, C J ^a   Smekal, W ^b   Werner, W S M ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Auger electron spectroscopy; Film thickness; Gate oxides; HfO2; HfSiO4; Simulation; Surface analysis; X ray photoelectron spectroscopy; ZrO2; ZrSiO4

Indexed keywords

EID: 33749668841     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2062946     Document Type: Conference Paper

References (11)

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors, 2003 edition and 2004 Update (available at http://public.itrs. net).
2. Wallace, R. M. and Wilk, G. D., Crit, Revs. Sol. State Mails. Sciences 28, 231-285 (2003).
3. Werner, W. S. M. (to be published).
4. Smekal, W., Werner, W. S. M., and Powell, C. J. (to be published).
5. SESSA is expected to be released in autumn, 2005.
6. Jablonski, A. and Powell, C. J., Surf. Science Reports 47, 33-92 (2002).
7. Werner, W. S. M., Surf. Interface Anal. 23, 696-704 (1995).
8. Werner, W. S. M., Surf. Interface Anal. 31, 141-176 (2001).
9. Powell, C. J. and Jablonski, A., NIST Electron Effective-Attenuation- Length Database (SRD 82), Version 1.0, National Institute of Standards and Technology, Gaithersburg, MD (2001).
10. Powell, C. J., and Jablonski, A., in Characterization and Metrology for ULSI: 2003, edited by D. G. Seiler et al., AIP Conference Proceedings 683 (American Institute of Physics, Melville, 2003), pp. 321-325.
11. Powell, C. J., Jablonski, A., Werner, W. S. M., and Smekal, W., Appl. Surf. Science 239, 470-480 (2005).