Nonradiative traps in InGaN/GaN multiple quantum wells revealed by two wavelength excitation

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Chen, I J ^a   Chen, T T ^a   Chen, Y F ^a   Lin, T Y ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSITIONS; EXCITATION SPECTROSCOPY; NONRADIATIVE TRAPS; WAVELENGTH EXCITATION;

CARRIER CONCENTRATION; DEFECTS; ELECTRIC EXCITATION; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33749504189     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360221     Document Type: Article

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