The effects of a stress field and chemical diffusion on electronic behaviour in InAs/GaAs quantum dots

Journal of Physics D: Applied Physics

Volumn 39, Issue 20, 2006, Pages 4311-4315

  Zhang, Xu ^a   Wang, Chong Yu ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; COMPUTATIONAL METHODS; DIFFUSION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CHEMICAL DIFFUSION; GA DIFFUSION; SELF ASSEMBLED INAS/GAAS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33749437277     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/20/004     Document Type: Article

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