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Volumn 100, Issue 6, 2006, Pages

Resonant photonic band gap structures realized from molecular-beam- epitaxially grown InGaAs/GaAs Bragg-spaced quantum wells

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG SPACED QUANTUM WELLS; GROWTH PARAMETERS; HEAVY HOLE EXCITON; RESONANT PHOTONIC BAND GAP STRUCTURE;

EID: 33749347081     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234814     Document Type: Article
Times cited : (28)

References (45)
  • 25
    • 0000811841 scopus 로고
    • The dispersion model used for GaAs/AlGaAs is from an adjustment to a room temperature model described in D. W. Jenkins, J. Appl. Phys. 68, 1848 (1990).
    • (1990) J. Appl. Phys. , vol.68 , pp. 1848
    • Jenkins, D.W.1
  • 34
    • 0034504590 scopus 로고    scopus 로고
    • 2 makes a substantial difference in reconstruction phase transition temperature [A. S. Bracker, M. J. Yang, B. R. Bennett, J. C. Culbertson, and W. J. Moore, J. Cryst. Growth 220, 384 (2000)]. Phase transition temperature also depends on whether undoped or doped substrates are used.
    • (2000) J. Cryst. Growth , vol.220 , pp. 384
    • Bracker, A.S.1    Yang, M.J.2    Bennett, B.R.3    Culbertson, J.C.4    Moore, W.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.