SIMS analyses of III-V semiconductor quantum-well and superlattice heterostructures

Surface and Interface Analysis

Volumn 25, Issue 6, 1997, Pages 397-403

  Gerardi, C ^a  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

Depth resolution; Quantum wells; SIMS; Superlattices

Indexed keywords

DIFFUSION IN SOLIDS; ION BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DEPTH RESOLUTION;

HETEROJUNCTIONS;

EID: 0031168750     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199706)25:6<397::AID-SIA248>3.0.CO;2-9     Document Type: Article

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