A high gain L-band GaAs FET technology for 28V operation

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 821-824

  Inoue, K ^a   Nagahara, M ^a   Ui, N ^a   Haematsu, H ^a   Sano, S ^a   Fukaya, J ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

28V operation; Amplifier; Base station; GaAs FET; High gain; High power; W CDMA

Indexed keywords

28V OPERATIONS; AMPLIFIER; BASE STATION; GAAS FET; HIGH GAIN; HIGH POWER; W-CDMA;

AMPLIFIERS (ELECTRONIC); CODE DIVISION MULTIPLE ACCESS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; INTERMODULATION; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTOR DOPING; TELECOMMUNICATION SYSTEMS; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

FIELD EFFECT TRANSISTORS;

EID: 4444368737     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K. Ebihara, K. Inoue, H. Haematsu, F. Yamaki, H. Takahashi and J. Fukaya, "An Ultra Broad 300W GaAs Power FET for W-CDMA Base Stations", 2001 IEEE MTT-S Digest, pp. 649-652.
2. K.Asano, Y.Miyoshi, K.Ishikura, Y.Nashimoto, M.Kuzuhara and M.Mizuta "Novel High Power AlGaAs/GaAs HFET with a Field-Modulating Plate Operated at 35V Drain Voltage", 1998 IEDM Technical Digest, pp.59 - 62.
3. K. Matsugana, K. Ishikura, I. Takenaka, W. Contrata, A. Wakejima, K. Ota, M. Kanamori and M. Kuzuhara, "A Low-Distortion 230W GaAs Power FP-HFET Operated at 22V for Cellular Base Stations", 2000 IEDM Technical Digest, pp.393-396
4. Y.Tateno, H.Takahashi, T.Igarashi and J.Fukaya, "A 150W E-mode GaAs Power FET with 35% PAE for W-CDMA Base Station", 1999 IEEE MTT-S Digest, pp.1087 - 1090.
5. Y.Nakasha, M.Nagahara, Y.Tateno, H.Takahashi, T.Igarashi, K.Joshin, J.Fukaya and M.Takikawa, "A Low-Distortion and High-Efficiency E-mode GaAs Power FET Based on an New Method to Improve Linearity Focused on gm Value", 1999 IEDM Technical Digest, pp.405 - 40