Electrochemical characterization of silicon electrodes: Part 1: Capacitance-voltage method

Journal of New Materials for Electrochemical Systems

Volumn 9, Issue 3, 2006, Pages 257-268

  Mahe E ^a   Rouelle, F ^a   Darolles, I ^a   Devilliers, D ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

Capacitance; Flat band potential; Inversion potential; Mott Schottky; Semiconductor characterization; Silicon

Indexed keywords

CAPACITANCE; ELECTROCHEMISTRY; INORGANIC ACIDS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SILICA; SILICON;

FLAT BAND POTENTIAL; INVERSION POTENTIAL; MOTT-SCHOTTKY; SEMICONDUCTOR CHARACTERIZATION;

ELECTRODES;

EID: 33749251686     PISSN: 14802422     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (26)

1. M. Chemla in "Encyclopedia of Electrochemistry", Edited by A. J. Bard and M. Stratmann, Vol. 7a (10), Wiley-VCH Verlag GmbH & Co, Weinheim, 2006.
2. C. Lévy-Clément, A. Lagoubi, R. Tenne, S. Neumann-Spallart, Electrochim. Acta, 37(5), 877 (1992).
3. S. Ottow, G. S. Popkirov, H. Foil, J. Electroanal. Chem., 455, 29 (1998).
4. T. Ohmi, T. Isagawa, M. Kogure, T. Imaoka, J. Electrochem. Soc., 140, 804 (1990).
5. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, M. Ohwada, J. Appl. Phys., 68, 1272 (1990).
6. M. Niwano, J.-I. Kageyama, K. Kurita, K. Kinashi, I. Takahashi, J. Appl. Phys., 76, 2157 (1994).
7. H. F. Wolf, Semiconductors, Wiley-Interscience, New-York, 1971.
8. E.H. Nicollian, J.R. Brews, MOS Physics and technology, Wiley-Interscience, New-York, 2003, p. 83.
9. R. Lindner, Bell Syst. Tech. J., 41, 803 (1962).
10. E.H. Nicollian, J.R. Brews, MOS Physics and technology, Wiley-Interscience, New-York, 2003, p. 235.
11. H. Gerischer, Semiconductor electrode reactions in "Advances in electrochemistry and electrochemical engineering" edited by P. Delahay, Vol. 1, Interscience Publishers, New-York, 1961, 139-232.
12. M. Chemla, V. Bertagna, R. Erre, F. Rouelle, S. petitdidier, D. Levy, Appl. Surf. Sc., 227, 193 (2004).
13. M. Chemla, V. Bertagna, F. Rouelle, S. petitdidier, D. Levy, Electrochemistry, 70(8), 609 (2002).
14. S. R. Morrison, Electrochemistry at semiconductor and oxidized metal electrodes, Plenum Press, New-York, 1980, p. 166.
15. S. R. Morrison, Electrochemistry at semiconductor and oxidized metal electrodes, Plenum Press, New-York, 1980, p. 129.
16. A. Baudrant, F. Tardif, C. Wyon, Caractérisation et nettoyage du silicium, Hermes/Lavoisier Editions, Paris, 2003.
17. X.G. Zhang, Electrochemistry of silicon and its oxide, Kluwer Academic/Plenum Press, New-York, 2001.
18. nd edition, John Wiley & Sons, New-York, 1981.
19. Asuha, Y.-L. Liu, O. Maida, M. Takahashi, H. Kobayashi, J. Electrochem. Soc. 151(12), G824 (2004).
20. S. R. Morrison, Electrochemistry at semiconductor and oxidized metal electrodes, Plenum Press, New-York, 1980, p.124.
21. Y.-J. Liu, H.-Z. Yu, J. Phys. Chem. B, 107(31), 7803 (2003).
22. J. A. Bardwell, N. S. Draper, P. Schmuki, J. App. Phys., 77(11), 8761 (1996).
23. M. Chemla, J.-F. Dufrêche, I. Darolles, F. Rouelle, D. Devilliers, S. Petitdidier, D. Lévy, Electrochim. Acta, 51, 665 (2005).
24. Materials Development Corporation, Chatsworth, CA, United-States.
25. B.H. Erné, F. Ozanam, J.-N. Chazalviel, J. Phys. Chem. B, 104(49), 11591 (2000).
26. P. Salvador, J. Phys. Chem., 94(10), 4373 (1990).