-
1
-
-
4544326826
-
-
University of California, Berkeley, California, USA
-
X. Xi, M. Dunga, J. He, W. Liu, K. M. Cao, X. Jin, J. Ou, M. Chan, A. Nikneja, and C. Hu, "BSIM4.3.0 User's Manual," University of California, Berkeley, California, USA.
-
BSIM4.3.0 User's Manual
-
-
Xi, X.1
Dunga, M.2
He, J.3
Liu, W.4
Cao, K.M.5
Jin, X.6
Ou, J.7
Chan, M.8
Nikneja, A.9
Hu, C.10
-
2
-
-
0036065743
-
An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices
-
O. Tornblad, and C. Blair, "An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices," in Dig. IEEE MTT-S Int. Microwave Symp., 2002, pp. 861-864.
-
(2002)
Dig. IEEE MTT-S Int. Microwave Symp.
, pp. 861-864
-
-
Tornblad, O.1
Blair, C.2
-
4
-
-
0030649497
-
A new empirical large signal model for silicon RF LDMOS FETs
-
M. Miller, T. Dinh, and E. Shumate, "A new empirical large signal model for silicon RF LDMOS FETs," in Dig. IEEE MTT-S Symp. Technologies Wireless Application, 1997, pp. 19-22.
-
(1997)
Dig. IEEE MTT-S Symp. Technologies Wireless Application
, pp. 19-22
-
-
Miller, M.1
Dinh, T.2
Shumate, E.3
-
5
-
-
0033364141
-
A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
-
W. R. Curtice, J. A. Pla, D. Bridges, T. Liang, and E. E. Shumate, "A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs," in Dig. IEEE MTT-S Int. Microwave Symp., 1999, pp 419-422.
-
(1999)
Dig. IEEE MTT-S Int. Microwave Symp.
, pp. 419-422
-
-
Curtice, W.R.1
Pla, J.A.2
Bridges, D.3
Liang, T.4
Shumate, E.E.5
-
6
-
-
0033718061
-
Characterization and modeling of LDMOS transistors on a 0.6um CMOS technology
-
E. C. Griffith, J. A. Power, S. C. Kelly, P. Elebert, S. Whiston, D. Bain, and M. O'Neill, "Characterization and modeling of LDMOS transistors on a 0.6um CMOS technology," in. Proc. Int. Conf. Microelectronic Test Structures, 2000, pp. 175-180.
-
(2000)
Proc. Int. Conf. Microelectronic Test Structures
, pp. 175-180
-
-
Griffith, E.C.1
Power, J.A.2
Kelly, S.C.3
Elebert, P.4
Whiston, S.5
Bain, D.6
O'Neill, M.7
-
7
-
-
0035689818
-
RF LDMOS characterization and its compact modeling
-
J. Jang, O. Tornblad, T. Arnborg, Q. Chen, K. Bamerjee, Z. Yu, and R. W. Dutton, "RF LDMOS characterization and its compact modeling," in Dig. IEEE MTT-S Int. Microwave Symp., 2001, pp. 967-970.
-
(2001)
Dig. IEEE MTT-S Int. Microwave Symp.
, pp. 967-970
-
-
Jang, J.1
Tornblad, O.2
Arnborg, T.3
Chen, Q.4
Bamerjee, K.5
Yu, Z.6
Dutton, R.W.7
-
8
-
-
0035444756
-
A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design
-
Sep.
-
Y. Yang, Y. Woo, J. Yi, and B. Kim, "A new empirical large-signal model of Si LDMOSFETs for high-power amplifier design," IEEE Trans. Microwave Theory Techniques, vol. 49, pp. 1626-1633, Sep. 2001.
-
(2001)
IEEE Trans. Microwave Theory Techniques
, vol.49
, pp. 1626-1633
-
-
Yang, Y.1
Woo, Y.2
Yi, J.3
Kim, B.4
-
9
-
-
20844441419
-
Large signal verification of the circuit oriented smoothie database model for LDMOS devices
-
th European Microwave Conf., 2004, pp. 217-220.
-
(2004)
th European Microwave Conf.
, pp. 217-220
-
-
Cuoco, V.1
Yanson, O.2
Hammes, P.3
Spirito, M.4
De Vreede, L.C.N.5
Steenwijk, A.V.6
Versleijen, M.7
Neo, W.C.E.8
Jos, H.F.F.9
Burghartz, J.N.10
-
10
-
-
85070028521
-
-
Silvaco International, Santa Clara, California USA
-
Silvaco International, Santa Clara, California USA.
-
-
-
-
11
-
-
85070034559
-
-
Agilent Technologies, Santa Rosa, California USA
-
Agilent Technologies, Santa Rosa, California USA.
-
-
-
-
12
-
-
0008603039
-
-
Cadence Design Systems, Inc., San Jose, California USA
-
Verilog-A Reference Manual, Cadence Design Systems, Inc., San Jose, California USA
-
Verilog-a Reference Manual
-
-
-
15
-
-
85070027391
-
-
http://www.agere.com/rfpower
-
-
-
-
16
-
-
0004005306
-
-
New York: Wiley
-
nd ed. New York: Wiley, 1981, p. 451.
-
(1981)
nd Ed.
, pp. 451
-
-
Sze, S.M.1
-
17
-
-
20444377612
-
Avalanche effects in silicon p-n junction. II. Structurally perfect junctions
-
A. Goetzberger, B. McDonald, R. H. Haitz, and R. M. Scarlet, "Avalanche effects in silicon p-n junction. II. Structurally perfect junctions, "J. Appl. Phys., vol. 34, p. 1591, 1963.
-
(1963)
J. Appl. Phys.
, vol.34
, pp. 1591
-
-
Goetzberger, A.1
McDonald, B.2
Haitz, R.H.3
Scarlet, R.M.4
|