RF LDMOS characterization and its compact modeling

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 967-970

  Jang, Jaejune ^a   Tornblad, Olof ^a   Arnborg, Torkel ^a   Chen, Qiang ^a   Banerjee, Kaustav ^a   Yu, Zhiping ^a   Dutton, Robert W ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK ANALYSIS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS;

COMPACT MODELING; QUASI-SATURATION EFFECT;

MOSFET DEVICES;

EID: 0035689818     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. A physically-based compact model for LDMOS transistors
2. New physical insights and models for high-voltage LDMOST IC CAD
3. Modeling and characterization of 80V LDMOSFET for RF communications
4. Compact electrothermal modeling of RF power LDMOS
5. Study of the quasi-saturation effect in VDMOS transistors
6. Quasi-saturation capacitance behavior of a DMOS device
7. Circuit-model for power LDMOS including Quasi-Saturation
8. Extracting small signal model parameters of silicon MOSFET transistors
9. Simplified GaAs MESFET model to 10 GHz
10. A new method for determining the FET small-signal equivalent circuit
11. Broad-band determination of the FET small-signal equivalent circuit
12. A physically based mobility model for numerical simulation of nonplanar devices