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Volumn 45, Issue 9 A, 2006, Pages 6806-6811

Instability of integrated shift register circuits using hydrogenated amorphous silicon thin film transistors

Author keywords

A Si:H; Bias stress; Clamping voltage; Clock coupling; Instability; Shift register; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; DAMPING; ELECTRIC POTENTIAL; HYDROGENATION; MATHEMATICAL MODELS; THIN FILM TRANSISTORS;

EID: 33749000849     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6806     Document Type: Article
Times cited : (38)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.