Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal

Journal of Crystal Growth

Volumn 295, Issue 2, 2006, Pages 124-128

  Li, Qiang ^a   Jie, Wanqi ^a   Fu, Li ^a   Wang, Tao ^a   Yang, Ge ^a   Bai, Xuxu ^a   Zha, Gangqiang ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

A1. Doping; A1. Electrical properties; A1. Optical properties; A1. Photoluminescence; B1. CdZnTe

Indexed keywords

CADMIUM COMPOUNDS; DEFECTS; DOPING (ADDITIVES); INDIUM; IONIZATION; LEAKAGE CURRENTS; PHOTOLUMINESCENCE;

FREE-CARRIER ABSORPTION; INDIUM DOPING; IONIZED DONORS; LATTICE ABSORPTION;

SINGLE CRYSTALS;

EID: 33748983919     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.07.030     Document Type: Article

References (13)

1. Takahashi T., and Watanabe S. IEEE Trans. Nucl. Sci. 48 (2001) 950
2. Limousin O. Nucl. Instrum. Meth. A 504 (2003) 24
3. Verger L., Bonnefoy J.P., Glasser F., and Ouvrier-Buffet P. J. Electron. Mater. 26 (1997) 738
4. Toney J.E., Schlesinger T.E., and James R.B. Nucl. Instrum. Meth. A 428 (1999) 14
5. Nemirovsky Y., Asa G., Gorelik J., and Peyser A. J. Electron. Mater. 29 (2000) 691
6. Schlesinger T.E., Toney J.E., Yoon H., Lee E.Y., Brunett B.A., Franks L., and James R.B. Mater. Sci. Eng. Rep. 32 (2001) 103
7. Hjelt K., Goorsky M.S., Tuomi T., Nenonen S., Eissler E.E., and Bavdaz M. Phys. Status Solidi (a) 162 (1997) 747
8. Fochuk P., Panchuk O., Feychuk P., Shcherbak L., Savitskyi A., Parfenyuk O., Ilashchuk M., Hage-Ali M., and Siffert P. Nucl. Instrum. Meth. A 458 (2001) 104
9. Kroger F.A. The Chemistry of Imperfect Crystals (1964), North-Holland, Amsterdam p. 655
10. Weger D., and Meyer E. J. Phys.: Condens. Matter 1 (1989) 5403
11. Sen S., Rhiger D.R., Curtis C.R., Kalisher M.H., Hettich H.L., and Currie M.C. J. Electron. Mater. 30 (2001) 611
12. Lax M., and Burstein E. Phys. Rev. 97 (1955) 39
13. Sun Y. Semiconductor Measurement Technology (1984), Metallurgy Industrial Press, China p. 225