메뉴 건너뛰기




Volumn 2006, Issue , 2006, Pages 155-165

Retention-Aware Placement in DRAM (RAPID): Software methods for quasi-non-volatile DRAM

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER ARCHITECTURE; COMPUTER HARDWARE; COMPUTER SOFTWARE; COMPUTER SYSTEMS; ENERGY EFFICIENCY; INFORMATION RETRIEVAL; MICROPROCESSOR CHIPS; OPTIMIZATION;

EID: 33748930402     PISSN: 15300897     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HPCA.2006.1598122     Document Type: Conference Paper
Times cited : (196)

References (25)
  • 1
    • 1842582489 scopus 로고    scopus 로고
    • Making typical silicon matter with razor
    • March
    • T. Austin, D. Blaauw, T. Mudge, K. Flautner. Making Typical Silicon Matter with Razor. IEEE Computer, Volume 37 Number 3, March 2004.
    • (2004) IEEE Computer , vol.37 , Issue.3
    • Austin, T.1    Blaauw, D.2    Mudge, T.3    Flautner, K.4
  • 2
    • 33748950636 scopus 로고    scopus 로고
    • Variable Refresh Control for a Memory. US Patent #6,778,457, Aug.
    • J. Burgan. Variable Refresh Control for a Memory. US Patent #6,778,457, Aug. 2004.
    • (2004)
    • Burgan, J.1
  • 3
    • 84859292145 scopus 로고    scopus 로고
    • CellularRAM and trade; - Micron website: http://download.micron.com/pdf/ flyers/cellularram_flyer.pdf.
  • 4
    • 33748942484 scopus 로고    scopus 로고
    • Dynamic DRAM Refresh Rate Adjustment Based on Cell Leakage Monitoring. US Patent #6,483,764, Nov.
    • L.L. Chen Hsu, G. Frankowsky, O. Weinfurtner. Dynamic DRAM Refresh Rate Adjustment Based on Cell Leakage Monitoring. US Patent #6,483,764, Nov. 2002.
    • (2002)
    • Hsu, L.L.C.1    Frankowsky, G.2    Weinfurtner, O.3
  • 5
    • 33748946598 scopus 로고    scopus 로고
    • Self-Refresh Apparatus for a Semiconductor Memory Device. US Patent #6,229,747, May
    • H.Y. Cho, J.K. Oh. Self-Refresh Apparatus for a Semiconductor Memory Device. US Patent #6,229,747, May 2001.
    • (2001)
    • Cho, H.Y.1    Oh, J.K.2
  • 6
    • 84944408150 scopus 로고    scopus 로고
    • Razor: A low power pipeline based on circuit-level timing speculation
    • IEEE CS Press
    • D. Ernst et al. Razor: A Low Power Pipeline Based on Circuit-Level Timing Speculation. MICRO-36, IEEE CS Press, 2003, pp.7-18.
    • (2003) MICRO-36 , pp. 7-18
    • Ernst, D.1
  • 7
    • 0032099759 scopus 로고    scopus 로고
    • On the retention time distribution of dynamic random access memory (DRAM)
    • June
    • T. Hamamoto, S. Sugiura, S. Sawada. On the Retention Time Distribution of Dynamic Random Access Memory (DRAM). IEEE Transactions on Electron Devices, Volume 45 Issue 6, June 1998, pp. 1300-1309.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.6 , pp. 1300-1309
    • Hamamoto, T.1    Sugiura, S.2    Sawada, S.3
  • 11
    • 33748930065 scopus 로고
    • Self-Refreshing of Dynamic Random Access Memory Device and Operating Method Therefor. US Patent #4,943,960, July
    • T. Komatsu. Self-Refreshing of Dynamic Random Access Memory Device and Operating Method Therefor. US Patent #4,943,960, July 1990.
    • (1990)
    • Komatsu, T.1
  • 13
    • 33748941773 scopus 로고
    • Temperature Responsive Refresh Control Circuit. US Patent #4,393,477, June
    • T. Murotani. Temperature Responsive Refresh Control Circuit. US Patent #4,393,477, June 1983.
    • (1983)
    • Murotani, T.1
  • 15
    • 0031642636 scopus 로고    scopus 로고
    • Optimizing the DRAM refresh count for merged DRAM/Logic LSIs
    • August
    • T. Ohsawa, K. Kai, K. Murakami. Optimizing the DRAM Refresh Count for Merged DRAM/Logic LSIs. ISPLED98, pp. 82-87, August 1998.
    • (1998) ISPLED98 , pp. 82-87
    • Ohsawa, T.1    Kai, K.2    Murakami, K.3
  • 16
    • 33748930064 scopus 로고    scopus 로고
    • Memory Having Variable Refresh Control and Method Therefor. US Patent #6,781,908, Aug.
    • P. Pelley, J. Burgan. Memory Having Variable Refresh Control and Method Therefor. US Patent #6,781,908, Aug. 2004.
    • (2004)
    • Pelley, P.1    Burgan, J.2
  • 17
    • 84859272965 scopus 로고    scopus 로고
    • Ubicom. http://www.ubicom.com
  • 18
    • 1842477897 scopus 로고    scopus 로고
    • Going beyond worst-case specs with TEAtime
    • March
    • A. Uht. Going Beyond Worst-Case Specs with TEAtime. IEEE Computer, Volume 37 Number 3, March 2004.
    • (2004) IEEE Computer , vol.37 , Issue.3
    • Uht, A.1
  • 19
    • 84859291728 scopus 로고    scopus 로고
    • UtRAM™ - Samsung website http://www.samsung.com/Products/ Semiconductor/SRAM.
  • 20
    • 0141516911 scopus 로고    scopus 로고
    • Power evaluation of a handheld computer: A case study
    • M. Viredaz, D. Wallach. Power Evaluation of a Handheld Computer: A Case Study. Compaq-WRL Research Report 2001/1, 2001. http://www.hpl.hp.com/research/ papers/2003/handheld.pdf
    • (2001) Compaq-WRL Research Report , vol.2001 , Issue.1
    • Viredaz, M.1    Wallach, D.2
  • 21
    • 33748924683 scopus 로고
    • Semiconductor Memory. US Patent #4,736,344, April
    • K. Yanagisawa. Semiconductor Memory. US Patent #4,736,344, April 1988.
    • (1988)
    • Yanagisawa, K.1
  • 22
    • 33748936888 scopus 로고    scopus 로고
    • DRAMatic cell phone showdown
    • 2/12
    • S. Fyffe. DRAMatic Cell Phone Showdown. Electronic News, 2/12/2001.
    • (2001) Electronic News
    • Fyffe, S.1
  • 24
    • 33748938573 scopus 로고    scopus 로고
    • Dram makers prep multichip cell phone memories
    • 1/3
    • Dram Makers Prep Multichip Cell Phone Memories. ElectroSpec, 1/3/2003.
    • (2003) ElectroSpec
  • 25
    • 33748921242 scopus 로고    scopus 로고
    • Infineon - Mobile-RAM, specialty DRAMs
    • Feb.
    • Infineon - Mobile-RAM, Specialty DRAMs. Application Note, V 1.1, Feb. 2002.
    • (2002) Application Note, v 1.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.