The control of Pb loss for PZT based FRAM

Integrated Ferroelectrics

Volumn 48, Issue , 2002, Pages 161-169

  Chu, Fan ^a   Fox, Glen ^a   Davenport, Tom ^a   Miyaguchi, Yuusuke ^b   Suu, Koukou ^b  

^a Ramtron International Corporation   (United States)

^b ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; LEAD; SCANNING ELECTRON MICROSCOPY; THIN FILM DEVICES;

FERROELECTRIC PERFORMANCE; FILM THICKNESS; LOW VOLTAGE FRAM; THIN FILM PROCESSING;

NONVOLATILE STORAGE;

EID: 33748903947     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/713718315     Document Type: Article

References (8)

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3. 3 thin films, " Applied Physics Letters, Vol. 75, no.26, pp.4186-4188, 1999.
4. 3 thin films measured in atmospheres of varying oxygen concentration," Applied Physics Letters, vol. 74, no.26, pp.4032-4033, 1999.
5. S. A. Mansour and R. W. Vest, "The dependence of ferroelectric and fatigue behaviors of PZT films on microstructure and orientation," Integrated Ferroelectrics, vol. 1, pp.57-69, 1992.
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7. 3 thin films," J. Mater. Res., vol. 14, no. 4, pp.1371-1377, 1999.
8. F. Chu, G. Hickert, T. D. Hadnagy, and K-K. Suu, " Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system," Integrated Ferroelectrics, vol. 26, pp.47-55, 1999.