Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 μm

Journal of Electronic Materials

Volumn 35, Issue 8, 2006, Pages 1613-1617

  Bhagwat, Vinay ^a   Xiao, Yegao ^a   Bhat, Ishwara ^a   Dutta, Partha ^a   Refaat, Tamer F ^b   Abedin, M Nurul ^b   Kumar, Vikram ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b NASA LANGLEY RESEARCH CENTER   (United States)

^c NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

GaInAsSb; Photodetector; Surface leakage

Indexed keywords

CARRIER CONCENTRATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

CARRIER DIFFUSION; GAINASSB; REVERSE BIAS CONDITIONS; SURFACE LEAKAGE;

PHOTODETECTORS;

EID: 33748680511     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0206-x     Document Type: Article

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