High rate growth of device-grade microcrystalline silicon films at 8 nm/s

Solar Energy Materials and Solar Cells

Volumn 90, Issue 18-19, 2006, Pages 3223-3231

  Niikura, Chisato ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

High rate growth; Microcrystalline silicon; Plasma enhanced chemical vapor deposition; Thin film

Indexed keywords

CATHODES; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SPECTROSCOPIC ANALYSIS; THIN FILMS;

HIGH RATE GROWTH; MICROCRYSTALLINE SILICON; OPTICAL EMISSION SPECTROSCOPY; SILANE DEPLETION;

CRYSTALLINE MATERIALS;

EID: 33748466166     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.06.036     Document Type: Article

References (7)

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