Mixed-valence transition metal complex based integral architecture for molecular computing (I): Attachment of linker molecule to silicon (100) - 2×1 surface

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 2, 2006, Pages 705-712

  Zhao, Peiji ^a   Woolard, Dwight ^b   Seminario, Jorge M ^c   Trew, Robert ^a  

^a North Carolina State University   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Department of Electrical and Computer Engineering   (United States)

Author keywords

Aromatic molecules; Contact attachment; Electrical characteristics; Ohmic contact; Schottky contact; Silicon surface

Indexed keywords

ELECTRIC PROPERTIES; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; OHMIC CONTACTS; SILICON; SULFUR;

AROMATIC MOLECULES; CONTACT ATTACHMENTS; ELECTRICAL CHARACTERISTICS; SCHOTTKY CONTACTS; SILICON SURFACE;

TRANSITION METAL COMPOUNDS;

EID: 33748447332     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003953     Document Type: Conference Paper

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