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Volumn 2, Issue 3, 2006, Pages 254-257

Leakage and charge injection optimization in a-Si AMOLED displays

Author keywords

Active matrix; Amorphous silicon (a Si); Charge feedthrough; Charge injection; Leakage; Organic light emitting diode (OLED); Thin film transistor; Threshold voltage

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CHARGE; LEAKAGE CURRENTS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

EID: 33748331344     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2006.878768     Document Type: Article
Times cited : (6)

References (7)
  • 3
    • 10644240902 scopus 로고    scopus 로고
    • Stability analysis of current programmed a-Si:H AMOLED pixel circuits
    • Dec.
    • K. Sakariya. P. Servati, and A. Nathan, "Stability analysis of current programmed a-Si:H AMOLED pixel circuits." IEEE Trans. Electron Devices, vol. 51. no. 12, pp. 2019-2025, Dec. 2004.
    • (2004) IEEE Trans. Electron Devices , vol.51 , Issue.12 , pp. 2019-2025
    • Sakariya, K.1    Servati, P.2    Nathan, A.3
  • 4
    • 0034498528 scopus 로고    scopus 로고
    • Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays
    • Dec.
    • Y. He, R. Hattori, and J. Kanicki. "Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays," IEEE Electron Device Lett., vol. 21. no. 12. pp. 590-592, Dec. 2000.
    • (2000) IEEE Electron Device Lett. , vol.21 , Issue.12 , pp. 590-592
    • He, Y.1    Hattori, R.2    Kanicki, J.3
  • 5
    • 0023330760 scopus 로고
    • Measurement and analysis of charge injection in MOS analog switches
    • Apr.
    • J. Shieh, M. Patil, and B. J. Sheu, "Measurement and analysis of charge injection in MOS analog switches." IEEE J. Solid-State Circuits, vol. SC-22, no. 2. pp. 277-281. Apr. 1987.
    • (1987) IEEE J. Solid-State Circuits , vol.SC-22 , Issue.2 , pp. 277-281
    • Shieh, J.1    Patil, M.2    Sheu, B.J.3
  • 6
    • 0036565075 scopus 로고    scopus 로고
    • Modeling of the static and dynamic behaviour of hydrogenated amorphous silicon thin-film transistors
    • May/Jun.
    • P. Servati and A. Nathan, "Modeling of the static and dynamic behaviour of hydrogenated amorphous silicon thin-film transistors," J. Vacuum Sci. Technol. A. vol. 20. no. 3. pp. 1038-1042. May/Jun. 2002.
    • (2002) J. Vacuum Sci. Technol. A. , vol.20 , Issue.3 , pp. 1038-1042
    • Servati, P.1    Nathan, A.2
  • 7
    • 36549092941 scopus 로고
    • Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors
    • Apr.
    • M. J. Powell, C. van Berkel, and J. R. Hughes, "Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors,"App. Phys. Lett.,vol.54, no. 14, pp. 1323-1325. Apr. 1989.
    • (1989) App. Phys. Lett. , vol.54 , Issue.14 , pp. 1323-1325
    • Powell, M.J.1    Van Berkel, C.2    Hughes, J.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.