Sensitivity enhancement of AlGaAs/InGaAs/GaAs quantum well-based Hall device

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Sghaier, H ^a   Bouzaiene, L ^a   Sfaxi, L ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HALL EFFECT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SENSORS;

HALL SENSORS; QUANTUM WELL-BASED HALL DEVICE; SENSITIVITY ENHANCEMENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33748309417     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335398     Document Type: Article

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