H diffusion for impurity and defect passivation: A physical model for solar cell processing

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 222-226

  Sopori, B L ^a   Zhang, Y ^a   Reedy, R ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; HYDROGEN; HYDROGENATION; ION IMPLANTATION; MATHEMATICAL MODELS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; TEMPERATURE;

CHARGE-STATE CONVERSION; LATTICE INTERSTITIAL SITES; SOLAR CELL PROCESSING;

SILICON SOLAR CELLS;

EID: 0036953319     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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