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Volumn 100, Issue 4, 2006, Pages

The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistor

(4) Benson, Chris a,c Albadri, Abdulrahman a,d Joyce, Malcolm J a Price, Robert A b

a LANCASTER UNIVERSITY (United Kingdom)

b CITY UNIVERSITY (United Kingdom)

c Appleyard Lees (United Kingdom)

d RIYADH COLLEGE OF TECHNOLOGY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; MOSFET DEVICES; STATISTICAL MECHANICS; THRESHOLD VOLTAGE; X RAYS;

NEUTRAL TRAPS; OXIDE FIELD; RADIATION-INDUCED CHARGE NEUTRALIZATION (RICN); VOLTAGE CHANGE;

DOSIMETERS;

EID: 33748304470 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2259814 Document Type: Article

Times cited : (17)

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