Estimation of mean-glandular dose from monitoring breast entrance skin air kerma using a high sensitivity metal oxide semiconductor field effect transistor (MOSFET) dosimeter system in mammography

Applied Radiation and Isotopes

Volumn 57, Issue 6, 2002, Pages 791-799

  Dong, S L ^a   Chu, T C ^a   Lee, J S ^b   Lan, G Y ^c   Wu, T H ^a,b,d   Yeh, Y H ^c   Hwang, J J ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL YANG MING UNIVERSITY   (Taiwan)

^c CHENG HSIN REHABILITATION MEDICAL CENTER   (Taiwan)

^d YUANPEI UNIVERSITY   (Taiwan)

Author keywords

BESAK; Mean glandular dose; MOSFET dosimeter

Indexed keywords

MAMMOGRAPHY; MONITORING; MOSFET DEVICES; RADIOLOGY; SKIN;

CONVERSION FACTORS;

DOSIMETRY;

ACCURACY; ARTICLE; BREAST; BREAST ENTRANCE SKIN AIR KERMA; CANCER DIAGNOSIS; CARCINOGENESIS; CONTROLLED STUDY; DIAGNOSTIC PROCEDURE; DOSIMETER; DOSIMETRY; ELECTRIC POTENTIAL; ENERGY; FILTER; HUMAN; MAMMOGRAPHY; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; PRIORITY JOURNAL; RADIATION EXPOSURE; RADIODIAGNOSIS; RADIOSENSITIVITY; THICKNESS; TUBE;

FEMALE; HUMANS; MAMMOGRAPHY; RADIATION DOSAGE; SEMICONDUCTORS; SENSITIVITY AND SPECIFICITY; SKIN;

EID: 0036888310     PISSN: 09698043     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-8043(02)00172-0     Document Type: Article

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