Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 222-228

  Hu, C K ^a   Canaperi, D ^a   Chen, S T ^b   Gignac, L M ^a   Herbst, B ^a   Kaldor, S ^b   Krishnan, M ^a   Liniger, E ^a   Rath, D L ^a   Restaino, D ^b   Rosenberg, R ^a   Rubino, J ^a   Seo, S C ^a   Simon, A ^b   Smith, S ^a   Tseng, W T ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

CoWP; Cu; Diffusion; Electromigration; Ta

Indexed keywords

BILAYER FILMS; DIELECTRIC LAYERS; FOCUSED ION BEAM (FIB) MICROSCOPY; VACUUM FURNACE;

ACTIVATION ENERGY; COPPER COMPOUNDS; DIFFUSION; ELECTRIC POTENTIAL; INTERCONNECTION NETWORKS; ION BEAMS; PHYSICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SENSITIVITY ANALYSIS; SINGLE CRYSTALS; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

ELECTROMIGRATION;

EID: 3042520517     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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