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1
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25144488077
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Immersion lithography exposure systems: Today's capabilities and tomorrow's expectations
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Mulkens, J.1
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2
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Full-field exposure tools for immersion lithography
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Owa, S.1
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3
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33745792049
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Development status of a 193-nm immersion scanner
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Bruges, Belgium, 12-15 September
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H. Nakano et al., "Development status of a 193-nm immersion scanner", presented at 2nd International Symposium on Immersion Lithography, Bruges, Belgium, 12-15 September 2005.
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2nd International Symposium on Immersion Lithography
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Nakano, H.1
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4
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33745779223
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Effect of azimuthally polarized illumination imaging on device pattern beyond 45-nm node
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K. Ozawa et al., "Effect of azimuthally polarized illumination imaging on device pattern beyond 45-nm node", presented at SPIE Microlithography 6154-12, (2006).
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SPIE Microlithography
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Ozawa, K.1
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5
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25144514378
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Experimental measurements of diffraction for periodic patterns by 193nm polarized radiation compared to rigorous em simulations
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M. H. Bennett et al., "Experimental measurements of diffraction for periodic patterns by 193nm polarized radiation compared to rigorous EM simulations", Proc. SPIE 5754, 599 (2005).
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Bennett, M.H.1
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6
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33745803089
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Simple and fast Kirchhoff-based model for prediction and correction of CD deviations caused by high-NA mask topography effects
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Y. Aksenov et al., "Simple and fast Kirchhoff-based model for prediction and correction of CD deviations caused by high-NA mask topography effects", presented at SPIE Microlithography 6154-54, (2006).
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SPIE Microlithography
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Aksenov, Y.1
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7
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28544434917
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Impact of the absorber thickness variation on the imaging performance of ArF immersion lithography
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M. Yoshizawa et al., "Impact of the absorber thickness variation on the imaging performance of ArF immersion lithography", Proc. SPIE 5853, 243 (2005).
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Yoshizawa, M.1
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8
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33745769037
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Optimizing absorber thickness of attenuating phase-shifting masks for hyper-NA lithography
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M. Yoshizawa et al., "Optimizing absorber thickness of attenuating phase-shifting masks for hyper-NA lithography", presented at SPIE Microlithography 6154-51, (2006).
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SPIE Microlithography
, vol.6154
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Yoshizawa, M.1
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9
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Development of a new PSM film system for 157-nm extensible to high-transmission 193 nm lithography
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Becker, H.W.1
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Investigation of polarization effects on new mask materials
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Bubke, K.1
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11
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Patterning of Ta/SiO2 high transmission EAPSM material for 193nm technology
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C. Koepernik et al., "Patterning of Ta/SiO2 high transmission EAPSM material for 193nm technology", Proc. SPIE 5852, 463 (2005).
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Koepernik, C.1
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12
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Materials and process parameters study on ArF immersion defectivity
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S. Kanna et al., "Materials and process parameters study on ArF immersion defectivity", presented at SPIE Microlithography 6153-08, (2006).
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SPIE Microlithography
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Kanna, S.1
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