Impact of the absorber thickness variation on the imaging performance of ArF immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5853 PART I, Issue , 2005, Pages 243-251

  Yoshizawa, Masaki ^a,b   Philipsen, Vicky ^b   Leunissen, Leonardus H A ^b  

^a SONY CORPORATION   (Japan)

^b IMEC   (Belgium)

Author keywords

193 nm lithography; Absorber thickness; Mask topography; Polarization; Rigorous 3D mask simulation

Indexed keywords

COMPUTER SIMULATION; ERROR ANALYSIS; LIGHT ABSORPTION; LIGHT POLARIZATION; PHOTOLITHOGRAPHY; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY;

193 NM LITHOGRAPHY; ABSORBER THICKNESS; MASK TOPOGRAPHY; RIGOROUS 3D MASK SIMULATION;

MASKS;

EID: 28544434917     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.617447     Document Type: Conference Paper

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